MB85RC256V 32KB Non Volatile FRAM Memory I2C Breakout Board Module for Low Power Data Storage and Fast Read Write

Enhance your low-power electronics projects with this high-performance FRAM Breakout Board, featuring a robust ferroelectric RAM chip designed for exceptional durability and speed. With 8 KB of non-volatile memory and ultra-fast read/write capabilities, this FRAM module is an ideal choice for data logging, buffering, and applications requiring long-term data retention without continuous power supply. Key Features: · Non-Volatile Memory with High Endurance: Supports up to 10 trillion read/write cycles, ensuring reliable and persistent data storage for extended use. · Ferroelectric RAM Technology: Similar to DRAM but incorporates a ferroelectric layer instead of a dielectric layer, providing faster access and lower power consumption. · Ideal for Low Power Applications: Perfectly suited for low power data loggers and devices that require data buffering when stable voltage sources are unavailable. · 8 KB Memory Capacity: Offers ample storage for various embedded and data-intensive projects, with fast processing speeds supported by a clock frequency of up to 20 MHz. · Instantaneous Byte-Level Access: Each byte can be read or written instantly, enhancing efficiency in real-time data handling. · Long Data Retention: Maintains memory reliability for up to 95 years at room temperature, ensuring data integrity over prolonged periods. · Wide Operating Voltage Range: Compatible with VCC/Logic levels from 2.7V to 5.5V, making it versatile for numerous electronic system integrations. · Easy Integration: Addressing configuration with 1010+A2+A1+A0 and default 0x50 simplifies implementation in your projects. Specifications: · Memory Size: 8 KB · Max Clock Speed: 20 MHz · Operating Voltage: 2.7-5.5 V · Address Mode: 1010+A2+A1+A0 · Default Address: 0x50 · Condition: 100% Brand New Package Includes: · 1 x FRAM Breakout Board This FRAM Breakout Board combines rapid access speeds, exceptional endurance, and long-term data retention in a compact form factor, making it an indispensable component for your advanced electronic designs and low power memory storage requirements.